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Silicon Schottky Diodes
q q q q
BAT 15- ... S
Beam lead technology Low dimension High performance Low barrier
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S Maximum Ratings Parameter Symbol Values BAT 15-020 S BAT 15-050 S Reverse voltage Forward current Junction temperature Storage temperature range Operating temperature range VR IF Tj Tstg Top 4 100 175 - 65 ... + 150 - 65 ... + 150 BAT 15-090 S BAT 15-110 S 4 50 V mA C Unit Marking - Ordering Code Q62702-D1262 Q62702-D1271 Q62702-D1279 Q62702-D1288 Pointed cathode Pin Configuration Package1) S
1)
For detailed information see chapter Package Outlines.
BAT 15- ... BAT 15- ... S
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Breakdown voltage IR = 10 A Diode capacitance VR = 0, f = 1 MHz BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S VF BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S FSSB - - - - rf BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S - - - - 3.5 4.0 7.0 10.0 - - - - 6.0 6.5 6.5 7.0 - - - - - - - - - - - - 0.26 0.28 0.30 0.31 0.35 0.39 0.44 0.45 - - - - - - - - dB V(BR) CT - - - - 0.30 0.20 0.14 0.10 0.35 0.25 0.15 0.12 V 4 - - V pF Values typ. max. Unit
Forward voltage IF = 1 mA
IF = 10 mA
Single sideband noise figure FIF = 1.5 dB, PLO = 0 dBm, fIF = 10.7 MHz f = 3.0 GHz BAT 15-020 S f = 6.0 GHz BAT 15-050 S f = 9.3 GHz BAT 15-090 S f = 16 GHz BAT 15-110 S Differential forward resistance IF = 10 mA IF = 50 mA

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